Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design

With the rapid development of wide-band gap semiconductor chip and package technologies, voltage class commercial silicon carbide (SiC) device is gradually improved. This paper concentrates on latest 3.3-kV full SiC-based metal oxide field-effect transistor (MOSFET) its application in railway traction. First, compared with Si-based insulated-gate bipolar (IGBT), MOSFET shows lower switching loss but weaker short-circuit capacity. Second, traction application, high frequency could reduce inverter loss, harmonic noise motor. Third, a well-designed filter necessary between motor to prevent from terminal overvoltage insulation problem, which are resulted long cable dv/dt. Finally, full-SiC prototype built tested, obvious advantages miniaturization lightweight.